Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V SR x8 240-pin UDIMM RAM Module Year_2015 x4 configuration RAM module is

x4 configuration RAM module is for use in DDR3L compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3L-10600

HMT351S6BFR8C-H9 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 18-chip 1048M x8 Pieces in Kit 1 Compatibility

5V Technology DDR3L Error Correction ECC Signal Processing Load Reduced Form Factor 240-pin LRDIMM Ranks Quad rank Configuration x4 Pieces in Kit 2 Compatibility

M393B4G70DM0-YH9Q2 Capacity 32GB (1x 32GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V SR x8 240-pin UDIMM RAM Module Year_2015 x4 configuration RAM module isProduct Overview This 4GB (1x 4GB) DDR3L 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience.